The equipment at the center is designed to be compatible with wafer sizes ranging from 6 inches to 4 inches, meeting the mass production R&D needs of MEMS companies while also accommodating prospective R&D requirements of universities and research institutes. The center is equipped with various exposure methods (stepper projection exposure, contact full-field exposure), coating methods (magnetron sputtering, chemical vapor deposition, inductively coupled plasma chemical vapor deposition, low-pressure chemical vapor deposition, electron beam evaporation, atomic layer deposition, precision electroplating, thermal oxidation), and etching methods (inductive coupled plasma etching, reactive ion etching, ion beam etching, plasma ashing, dry steam etching). It also features thin film and device performance characterization tools (film thickness measuring instrument, thin film stress measurement instrument, scanning electron microscope, high-precision temperature probe station, step profiler, and 3D surface profiler).